Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs
Overview & Synopsis
In this work, the static and low frequency noise characterization of standard and rotated UTBOX n - type transistors is reported. The main short channel effects and analog parameters are studied in order to investigate the impact of the channel orientation: <110> versus <100>. In addition to the improvement on the electrical properties for the rotated - channel devices, the 1/f noise level is found to be quite similar for long - channel devices for both rotated and standard channel transistors. Low frequency noise spectroscopy is also used as a diagnostic tool in order to identify traps in the Si film.
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Document Information
| Document Title | Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs |
|---|---|
| Author / Organization | Bogdan Cretu, E. Simoen, Jean-Marc Routoure, Régis Carin, M. Aoulaiche, Cor Claeys |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2015 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-83163 |
| Original Source Link | Visit Source Page on hal.science » |