Silicon wafers for integrated circuit process
Overview & Synopsis
Silicon as a substrate material will continue to dominate the market of integrated circuits for many years. We first review how crystal pulling procedures impact the quality of silicon. We then investigate how thermal treatments affect the behaviour of oxygen and carbon, and how, as a result, the quality of silicon wafers evolves. Gettering techniques are then presented. We conclude by detailing the requirements that wafers must satisfy at the incoming inspection.
Indexed from repository: HAL Open Science
(
hal.science)
Keyboard Shortcuts:
← / → for pages • + / - for zoom • 0 to fit width
Powered by Mozilla PDF.js v3.11
Document Information
| Document Title | Silicon wafers for integrated circuit process |
|---|---|
| Author / Organization | B. Leroy |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1986 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-9853 |
| Original Source Link | Visit Source Page on hal.science » |