Development of two techniques for thermal characterization of materials : Scanning Thermal Microscopy (SThM) and 2ω method

Overview & Synopsis

Two techniques to characterize the thermal properties of materials and to analyze the heat transfer at the micro/nanoscales have been studied and are presented in this manuscript. The first technique is an Atomic Force Microscopy (AFM)-based Scanning Thermal Microscopy (SThM) technique. Operating in its active mode, the AFM probe integrates a resistive element that is electrically heated. Used in AFM contact mode, it allows the localized thermal excitation of the material to be studied. The determination of the sample thermal properties requires the analysis of the probe thermal response through the modeling of the probe-sample system including its surrounding. Through a state of the art of the SThM studies, the current scientific questions and the analytical models used to analyze the probe-sample system are exposed. Special attention is given to the probe-sample thermal interaction that conditions the tip-sample interface temperature. In this work, a new methodology based on the analysis of the dependence of force-distance curves on probe temperature obtained in ambient air has been established. It permits the study and the specification of the heat rate exchanged between probe and sample through thermal conduction through water meniscus. The methodology has been applied with samples with different thermal properties, surface roughness and wettability to three resistive probes different in size and heater configurations: Wollaston, KNT and doped silicon (DS) probes. Whatever the probe and the sample are, the contribution of water meniscus in the probe-sample interaction has been shown to be lower than the one through air. The thermal conductances at the solid-solid contact were determined for various samples. This allowed identifying the phonon transmission coefficient in the case of KNT probe and a nonmetallic sample. The heat conduction through air strongly depends on the sample thermal conductivity. Moreover, the sensitivity to sample thermal conductivity for the Wollaston and KNT probes is shown to be strongly reduced for thermal conductivities larger than 10 and few W.m-1.K-1 respectively. The second technique developed in this thesis is a less local thermal analysis method. It operates by contact, requiring the implementation of the sample with a network of resistive wire probes. One wire of the network is heated by an alternating current at frequency f and has the role of heating source, continuous and at 2f frequency, for the sample. A 2D analytical model, based on the principle of thermal-waves, was developed to identify though the measurements the effective thermal properties of anisotropic samples. Finite element simulations and this model were used to design the experimental set-up and validate the method on a sample of pure silicon. The results obtained at sample temperatures ranging from ambient to 500 K are consistent with literature.