Magnetoresistance of galfenol-based magnetic tunnel junction
Overview & Synopsis
The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance(TMR) effect of up to 11.5% in amplitude.
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hal.science)
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Document Information
| Document Title | Magnetoresistance of galfenol-based magnetic tunnel junction |
|---|---|
| Author / Organization | Benoit Gobaut, G. Vinai, C. Castán-Guerrero, D. Krizmancic, H. Rafaqat, S. Roddaro, G. Rossi, G. Panaccione, Mahmoud Eddrief, Massimiliano Marangolo, P. Torelli |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2015 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-89887 |
| Original Source Link | Visit Source Page on hal.science » |