HIGH TEMPERATURE 1H NMR IN a-Si : H
Overview & Synopsis
Pulsed NMR measurements of 1H have been employed to study the chemical bonding and diffusion of hydrogen atoms in hydrogenated amorphous silicon (a-Si : H) films at elevated temperatures (20-530°C). The spin-lattice relaxation time T1 is observed to go through a sharp drop above ~400°C. The previously observed low temperature T1 minimum near 30K is essentially unaffected by annealing at temperatures up to ~500°C where over 50% of the hydrogen has evolved.
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Document Information
| Document Title | HIGH TEMPERATURE 1H NMR IN a-Si : H |
|---|---|
| Author / Organization | W. Carlos, P. Taylor |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1981 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-69844 |
| Original Source Link | Visit Source Page on hal.science » |