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Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory.
Author / Organization: Gong FH, Zhang S, Li N, Guo X, Chen YT, Zhu YL, Wang JH, Yin SS, Li XL, Wang YJ, Yu H, Tang YL, Hong Z, Tao X, Chai Y, Zhang G, Ma XL
| File Format | PDF (Portable Document Format) |
|---|---|
| Publication Year | 2026 |
| Source Host |
PubMed Central
(pmc.ncbi.nlm.nih.gov)
|
| License / Terms | Open Access / Creative Commons |
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