Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory.
Overview & Synopsis
Open access biomedical research article published in Nat Commun.
Indexed from repository: PubMed Central
(
pmc.ncbi.nlm.nih.gov)
Keyboard Shortcuts:
← / → for pages • + / - for zoom • 0 to fit width
Powered by Mozilla PDF.js v3.11
Document Information
| Document Title | Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory. |
|---|---|
| Author / Organization | Gong FH, Zhang S, Li N, Guo X, Chen YT, Zhu YL, Wang JH, Yin SS, Li XL, Wang YJ, Yu H, Tang YL, Hong Z, Tao X, Chai Y, Zhang G, Ma XL |
| Subject & Discipline | Nat Commun |
| Categories | Medicine & Health |
| Publication Year | 2026 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
PubMed Central
(pmc.ncbi.nlm.nih.gov)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-64175 |
| Original Source Link | Visit Source Page on pmc.ncbi.nlm.nih.gov » |