Méthodologie d'approche pour la conception des transistors VDMOS de puissance
Overview & Synopsis
In this paper, a design method for Power MOSFET devices, based on the physical phenomena and electrical properties of the structure, is presented. This method is implemented in a software called Power MOSFET's Designer, which only needs three inputs : the layout (cells, design rules, chip area), the breakdown voltage and the technological family characteristics, to define the SPICE equivalent circuit of the transistor. It is well suited to the simulation of power electronics circuits. Application examples are given.
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hal.science)
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Document Information
| Document Title | Méthodologie d'approche pour la conception des transistors VDMOS de puissance |
|---|---|
| Author / Organization | B. Beydoun, Henri Tranduc, F. Oms, A. Peyre Lavigne, P. Rossel |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1994 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-51764 |
| Original Source Link | Visit Source Page on hal.science » |