Frustration and (111) silicon surface
Overview & Synopsis
Careful analysis of the currently available experimental data on (111) surface of silicon leads us to believe that a positive correlation energy and positive dispersion are responsible for a split surface band of dangling electrons. The resultant ground-state is paramagnetic and insulating but cannot order antiferromagnetically because of the pathological frustration of the triangular lattice. Instead a ground-state results of two correlated zig-zag Heisenberg chains of S = 1/2 electrons for the unconstructed (1×1) surface. Surface reconstruction lifts the degeneracy between the two chains, stabilizes the well-known (2×1) surface and gives it a pronounced one-dimensional character.
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Document Information
| Document Title | Frustration and (111) silicon surface |
|---|---|
| Author / Organization | B.K. Chakraverty |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1983 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-47647 |
| Original Source Link | Visit Source Page on hal.science » |