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Frustration and (111) silicon surface
B.K. Chakraverty

Frustration and (111) silicon surface

Author / Organization:
Science & Mathematics Published 1983 Verification Pending

Overview & Synopsis

Careful analysis of the currently available experimental data on (111) surface of silicon leads us to believe that a positive correlation energy and positive dispersion are responsible for a split surface band of dangling electrons. The resultant ground-state is paramagnetic and insulating but cannot order antiferromagnetically because of the pathological frustration of the triangular lattice. Instead a ground-state results of two correlated zig-zag Heisenberg chains of S = 1/2 electrons for the unconstructed (1×1) surface. Surface reconstruction lifts the degeneracy between the two chains, stabilizes the well-known (2×1) surface and gives it a pronounced one-dimensional character.

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Document Information

Document Title Frustration and (111) silicon surface
Author / Organization B.K. Chakraverty
Subject & Discipline Multidisciplinary Academic Open Research
Categories Science & Mathematics
Publication Year 1983
License / Rights Open Access / Creative Commons
Resource Verification Listed PDF (Verification Pending)
Original Host Website HAL Open Science (hal.science)
File Format application/pdf (Portable Document Format)
Language EN
Catalog ID DOC-47647
Original Source Link Visit Source Page on hal.science »