Characterization of undoped high resistivity CdTe grown by a THM method
Overview & Synopsis
Using time of flight technique, it is shown that the level at E v + 0.15 eV, attributed generally to the association of a dopant impurity and a cadmium vacancy, is present in undoped materials. Several methods (TSC, SIMS, nuclear activation) have been used to investigate the nature of this impurity.
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Document Information
| Document Title | Characterization of undoped high resistivity CdTe grown by a THM method |
|---|---|
| Author / Organization | R. Stuck, J.C. Muller, P. Siffert |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1976 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-47174 |
| Original Source Link | Visit Source Page on hal.science » |