Substrate influence on MPCVD boron-doped homoepitaxial diamond

Overview & Synopsis

We report a study of boron-doped diamond epilayers grown on (100) HPHT diamond substrates by microwave plasma chemical vapor deposition (MPCVD) in simultaneous or successive runs. The structural and crystalline quality of the samples have been investigated by several techniques. The profiles performed by secondary ion mass spectrometry (SIMS) show the homogeneity in depth of the boron concentration in all layers. Cathodoluminescence (CL) spectroscopy indicates state-of-the-art epilayers. The substrate misorientation angles have been investigated by X-ray diffraction (XRD). Confocal micro-Raman mapping of the full width at half-maximum of the 1332 cm–1 diamond line was also preformed on all substrates. It evidences crystalline inhomogeneities that are known to be growth sectors. We show a relation between the epilayer surface morphology, observed by Nomarski optical microscopy, and the substrate crystallinity.