Atomic Layer Epitaxy Growth of AIN Thin Films
Overview & Synopsis
AIN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl3 and NH3 as precursors. A growth rate of 1.0 Å/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.
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Document Information
| Document Title | Atomic Layer Epitaxy Growth of AIN Thin Films |
|---|---|
| Author / Organization | K.-E. Elers, M. Ritala, M. Leskelä, L.-S. Johansson |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1995 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-24959 |
| Original Source Link | Visit Source Page on hal.science » |