ELECTRONIC STATES AND TRANSPORT PROPERTIES OF AN n-TYPE δ-FUNCTION DOPING LAYER IN p-TYPE Si
Overview & Synopsis
An extremely sharp and well-defined sheet of Sb-dopant atoms can be embedded in Si with high p-type background during MBE growth. We have measured the transport parallel and perpendicular to the doping layer. The electronic levels of 2-dimensional subbands have been detected.
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Document Information
| Document Title | ELECTRONIC STATES AND TRANSPORT PROPERTIES OF AN n-TYPE δ-FUNCTION DOPING LAYER IN p-TYPE Si |
|---|---|
| Author / Organization | G. Tempel, F. Koch, H. Zeindl, I. Eisele |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1987 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-248681 |
| Original Source Link | Visit Source Page on hal.science » |