Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation
Overview & Synopsis
Conducting Bridge Random Access Memories (CBRAM) are a promising substitute for FLASH technology but problems with limited retention of the low resistance ON state still hamper their massive deployment. Depth resolved X-ray Absorption Spectroscopy has been used to describe the chemical state of the atoms of the active electrode (in this case Ag) and to reveal the role of Sb as stabilizer of the metallic state
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Document Information
| Document Title | Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation |
|---|---|
| Author / Organization | F. d'Acapito, E. Souchier, P. Noe, P. Blaise, M. Bernard, V. Jousseaume |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2015 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-244273 |
| Original Source Link | Visit Source Page on hal.science » |