CONDUCTING DIFFUSION BARRIER : FORMATION AND CHARACTERISATION OF WN OBTAINED BY THERMAL ANNEALING UNDER NH3 OF W FILMS DEPOSITED ON Si
Overview & Synopsis
From Rutherford Backscattenng and X-ray diffraction we show that above a critical W thickness (< 2000 Å), WSi2 covered by γ WN can be formed by annealing under NH3 of W films deposited on C-Si. Its resistivity is ~ 100µΩ-cm.
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Document Information
| Document Title | CONDUCTING DIFFUSION BARRIER : FORMATION AND CHARACTERISATION OF WN OBTAINED BY THERMAL ANNEALING UNDER NH3 OF W FILMS DEPOSITED ON Si |
|---|---|
| Author / Organization | A. Deneuville, M. Benyahya, M. Brunel, B. Canut |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1988 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-238314 |
| Original Source Link | Visit Source Page on hal.science » |