Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films
Overview & Synopsis
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V∙s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.
Indexed from repository: HAL Open Science
(
hal.science)
Keyboard Shortcuts:
← / → for pages • + / - for zoom • 0 to fit width
Powered by Mozilla PDF.js v3.11
Document Information
| Document Title | Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films |
|---|---|
| Author / Organization | Shengwei Shi, G. Schmerber, J. Arabski, J.-B. Beaufrand, D. J. Kim, S. Boukari, M. Bowen, N. T. Kemp, N. Viart, G. Rogez, E. Beaurepaire, H. Aubriet, J. Petersen, C. Becker, D. Ruch |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2009 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-236062 |
| Original Source Link | Visit Source Page on hal.science » |