Optical properties of GaN/AlN quantum dots
Overview & Synopsis
We present here a review of the peculiar optical properties of GaN/AlN quantum dots. These systems show unusually large exciton binding energies and band-offsets. Moreover, when grown along the (0001) axis in the wurtzite phase, the optical properties are dominated by huge on-axis internal electric fields, leading to a very low oscillator strength and complex dynamical behavior. It is also possible to grow GaN quantum dots in the cubic phase or along nonpolar axis of the wurtzite cell. We discuss properties of ensembles of quantum dots, as well as of single quantum dots studied by micro-photoluminescence.
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Document Information
| Document Title | Optical properties of GaN/AlN quantum dots |
|---|---|
| Author / Organization | Pierre Lefebvre, B. Gayral |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2008 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-175828 |
| Original Source Link | Visit Source Page on hal.science » |