NON-EQUILIBRIUM HOT-CARRIER DIFFUSION PHENOMENON IN SEMICONDUCTORS II. AN EXPERIMENTAL MONTE CARLO APPROACH

Overview & Synopsis

An ensemble Monte Carlo technique is used to study the transport characteristics of hot carriers in the Transient Dynamic Response (TDR) to a steady homogeneous electric field. This is applied to n-type Silicon and an analysis of the time evolution of important quantities such as correlation function, diffusion coefficient and average energy is presented. The departure from Gaussian behavior of the spatial distribution function is also studied taking into account high order cumulants of the distribution. Retardation effects involved in the transport processes on the very-short timelspace scale and the validity of the equations actually used are discussed in terms of the EMC results.