Up to 300 K lasing with GeSn-On-Insulator microdisk resonators
Overview & Synopsis
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn.
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hal.science)
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Document Information
| Document Title | Up to 300 K lasing with GeSn-On-Insulator microdisk resonators |
|---|---|
| Author / Organization | A Bjelajac, Maksym Gromovyi, Emilie Sakat, Gilles Patriarche, N Pauc, V Calvo, Philippe Boucaud, F Boeuf, A Chelnokov, V Reboud, M Frauenrath, J-M Hartmann, M El Kurdi |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2022 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-154768 |
| Original Source Link | Visit Source Page on hal.science » |