A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation
Overview & Synopsis
A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify if the failure mechanism is due to a breakdown, a latchup or a thermal runaway phenomenon.
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Document Information
| Document Title | A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation |
|---|---|
| Author / Organization | Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2007 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-154616 |
| Original Source Link | Visit Source Page on hal.science » |