Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions
Overview & Synopsis
Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been studied. By analyzing internal physical parameters, it was highlighted that the elevation of the temperature causes an acceleration of the failure which is due to a thermal runaway phenomenon, whereas the influence of the gate resistance on the failure evolution is minimal.
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hal.science)
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Document Information
| Document Title | Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions |
|---|---|
| Author / Organization | Adel Benmansour, Stephane Azzopardi, Jean-Christophe Martin, Eric Woirgard |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2007 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-151159 |
| Original Source Link | Visit Source Page on hal.science » |