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Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization

Author / Organization: Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Jean-Laurent Grondin, Laurent Bary, Jaime Mimila-Arroyo, Jacques Chevallier

File Format PDF (Portable Document Format)
Publication Year 2007
Source Host HAL Open Science (hal.science)
License / Terms Open Access / Creative Commons

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