SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23]
Overview & Synopsis
The main factor still hindering a wide industrial adoption of SiC power MOSFETs is essentially a global reduced ruggedness in comparison to their Si counterparts. The proposed gate driving architecture leverages faultinduced gate voltage disturbances and enhances them to facilitate their detection through two dedicated commutated gate resistors. This approach combines switching dynamics and enhanced ON-state faul t sensibility. This architecture, affording innovative short-circuits and overload detections, as well as gate-oxide integrity monitoring, was validated on a 600V short-circuit power test bench using commercial 1200V/36A SiC MOSFETs.
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Document Information
| Document Title | SiC Power MOSFET Overload Detection, Short-Circuit Protection and Gate-Oxide Integrity Monitoring Using a Switched Resistors Dual-Channel Gate-Driver [ESREF'23] |
|---|---|
| Author / Organization | Mathis Picot-Digoix, Frédéric Richardeau, Wadia Jouha, Jean-Marc Blaquière, Sébastien Vinnac, Stéphane Azzopardi, Thanh Long Le |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2023 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-135431 |
| Original Source Link | Visit Source Page on hal.science » |