Interdigitated Back Contacts Solar Cells on Transferred Si-Thin Film Epitaxially Grown on Porous Silicon
Overview & Synopsis
In this paper we propose a novel approach to thin-film silicon solar cells technology developed at INSA-LYON, named ELIT process (Epitaxial Layer for Interdigitated back contacts solar cell Transferred using porous silicon as a weakened layer). High crystal quality Si film is grown on porous silicon (PS) by Vapor Phase Epitaxy. This single crystal silicon epitaxial layer was processed into solar cells by realizing all contacts on the back side. Then, thin film solar cell is transferred onto a low-cost substrate before texturation and deposition of antireflective coating on the front side. Preliminary experiments of transferred IBC thin-film solar cell lead to 7.7% efficiency with a 70 µm thick active layer.
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Document Information
| Document Title | Interdigitated Back Contacts Solar Cells on Transferred Si-Thin Film Epitaxially Grown on Porous Silicon |
|---|---|
| Author / Organization | Jed Kraiem, O. Nichiporuk, Pierre Papet, J.-F. Lelièvre, Alain Fave, Anne Kaminski, Erwann Fourmond, J-P Boyeaux, P-J Ribeyron, A Laugier, Mustapha Lemiti |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2005 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-123864 |
| Original Source Link | Visit Source Page on hal.science » |