Scalable normally-off MIS-HEMT using Fluorine implantation below the channel
Overview & Synopsis
A new normally-off Metal-Insulator- Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) is proposed. The design is based on the implantation of fluorine ions in the GaN layer below the gate electrode under the AlGaN/GaN interface. Sensitivity analyses are carried out, showing the effects of the fluorine concentration and the thickness of the insulator on the threshold voltage. The limitations and scalability of this technique are pointed out.
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Document Information
| Document Title | Scalable normally-off MIS-HEMT using Fluorine implantation below the channel |
|---|---|
| Author / Organization | Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2014 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-123760 |
| Original Source Link | Visit Source Page on hal.science » |