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Propriétés électriques et modélisation des dispositifs MOS avanvés : dispositif FD-SOI, transistors sans jonctions (JLT) et transistor à couche mince à semi-conducteur d'oxyde amorphe. Electrical properties and modeling of advanced MOS devices : FD-SOI device, Junctionless Transistor, and Amorphous-Oxide-Semiconductor Thin Film Transistor
Author / Organization: So Jeong Park
| File Format | PDF (Portable Document Format) |
|---|---|
| Publication Year | 2013 |
| Source Host |
HAL Open Science
(hal.science)
|
| License / Terms | Open Access / Creative Commons |
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