Strain-Engineered MOSFETs
Overview & Synopsis
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.
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Document Information
| Document Title | Strain-Engineered MOSFETs |
|---|---|
| Author / Organization | C.K. Maiti, T.K. Maiti |
| Subject & Discipline | Electrical and Electronic Engineering, Very Large Scale Integration (VLSI), Microcontrollers, PLC, etc., Embedded Systems |
| Categories | Electrical and Electronic Engineering |
| Publication Year | 2018 |
| ISBN | 1138075604 |
| License / Rights | Creative Commons License (CC) |
| Resource Verification | Access Restricted / Protected Host |
| Original Host Website |
FreeComputerBooks.com
(freecomputerbooks.com)
|
| File Format | application/pdf (Portable Document Format) |
| Language | ENGLISH |
| Catalog ID | DOC-113748 |
| Original Source Link | Visit Source Page on freecomputerbooks.com » |
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