Tunnel Diode-based Harmonic Backscatter Amplifier
Overview & Synopsis
Harmonic backscattering is an attractive technique in very-low power communication scheme. The hardware implementation is extremely simple due to the absence of selfjamming issue (as compared to fundamental backscattering communication) and it can even allow full-duplex communication. Unfortunately, the conversion power losses from fundamental to harmonic frequency is hampering the communication distance. This paper reports a tunnel diode-based reflection amplifier used in its nonlinear negative resistance region. Measured under an input power of -60dBm, it has a 33dB gain, which can enhance the communication distance by a factor of 5.6. The amplifier operate under 200mV voltage supply, which can easily be provided by ambient RF energy harvesting.
hal.science)
← / → for pages • + / - for zoom • 0 to fit width
Powered by Mozilla PDF.js v3.11
Document Information
| Document Title | Tunnel Diode-based Harmonic Backscatter Amplifier |
|---|---|
| Author / Organization | Karan Gumber, Corinne Dejous, Simon Hemour |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 2024 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-111400 |
| Original Source Link | Visit Source Page on hal.science » |