Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization
Overview & Synopsis
In this paper, results of a complete study dealing with the deposition of in situ phosphorus doped polysilicon and combining experimental approach, deposition modelling and film characterization are presented. Their interpretation has helped to put forward the importance of the entrance zone length as deposition parameter, which was most often totally neglegted.
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hal.science)
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Document Information
| Document Title | Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization |
|---|---|
| Author / Organization | A. Tounsi, E. Scheid, Catherine Azzaro-Pantel, Patrick Duverneuil, Jean‐Pierre Couderc |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1993 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-110490 |
| Original Source Link | Visit Source Page on hal.science » |