LUMINESCENCE IN PLASMA DEPOSITED AMORPHOUS SixC1-x ALLOYS
Overview & Synopsis
Results are presented on the composition and temperature dependence of the luminescence in plasma deposited amorphous SixC1-x alloys using films of composition ranging from pure Si to 90% C in the 77 K to 450 K temperature range. There is evidence to suggest that the radiative recombination rate increases by over a factor of 103 from pure Si to C rich films. This increase is shown to be also consistent with the composition dependence of the quantum efficiency. These results are discussed in terms of a radiative tunnelling model.
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Document Information
| Document Title | LUMINESCENCE IN PLASMA DEPOSITED AMORPHOUS SixC1-x ALLOYS |
|---|---|
| Author / Organization | R. Sussmann, E. Lauder |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1981 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-109062 |
| Original Source Link | Visit Source Page on hal.science » |