Laser-caused modification of structure and mechanical properties of silicon
Overview & Synopsis
There were investigated laser annealing conditions which cause relaxation of microtensions near in proximity to dislocation sources. It was determined that density and efficiency of such sources may be varied through oxidation of Si crystalles. Utiligation of the found conditions of thermal and laser annealing enabled the autors to set microchardness of porous Si and flexture of Si-SiO2-Si (polycrystallic) structures.
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Document Information
| Document Title | Laser-caused modification of structure and mechanical properties of silicon |
|---|---|
| Author / Organization | V. Pasetchny, V. Makara, V. Sizontov, O. Rudenko, G. Vesna |
| Subject & Discipline | Multidisciplinary Academic Open Research |
| Categories | Science & Mathematics |
| Publication Year | 1994 |
| License / Rights | Open Access / Creative Commons |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
HAL Open Science
(hal.science)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-107388 |
| Original Source Link | Visit Source Page on hal.science » |