Fluorine surface engineering for V(t) control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing.
Journal: Nano convergence
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How to Cite this Article
Park K, Lim S, Han S, et al. (2026). "Fluorine surface engineering for V(t) control and memory window boost in HZO FeFET toward high-performance, energy-efficient in-memory computing.". Nano convergence. https://doi.org/10.1186/s40580-026-00573-x