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Thermally Tunable Fading Memory Enabled by Opto-Ionic-Electronic Coupling in AgInP2S6-Gated Two-Dimensional Field-Effect Transistors.
Sen D, Chowdhury A, Rasyotra A, Ding L, Gusmao R, Ghosh S, Ghosh A, Redwing JM, Somvanshi D, Yang Y, Sofer Z, Das S

Thermally Tunable Fading Memory Enabled by Opto-Ionic-Electronic Coupling in AgInP2S6-Gated Two-Dimensional Field-Effect Transistors.

Medicine & Health Verification Pending

Overview & Synopsis

Open access biomedical research article published in ACS Nano.

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Indexed from repository: PubMed Central (pmc.ncbi.nlm.nih.gov)
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Document Title Thermally Tunable Fading Memory Enabled by Opto-Ionic-Electronic Coupling in AgInP2S6-Gated Two-Dimensional Field-Effect Transistors.
Author / Organization Sen D, Chowdhury A, Rasyotra A, Ding L, Gusmao R, Ghosh S, Ghosh A, Redwing JM, Somvanshi D, Yang Y, Sofer Z, Das S
Subject & Discipline ACS Nano
Categories Medicine & Health
License / Rights Open Access / Creative Commons
Resource Verification Listed PDF (Verification Pending)
Original Host Website PubMed Central (pmc.ncbi.nlm.nih.gov)
File Format application/pdf (Portable Document Format)
Language EN
Catalog ID DOC-64518
Original Source Link Visit Source Page on pmc.ncbi.nlm.nih.gov »