๐Ÿ“–
Stress-engineered 0.34 nm graphene memristors for low-power probabilistic computing.
Liu Y, Li J, Pan Z, Ding H, Hong Y, Wu F, Zhang P, Guo Y, Liu Z, Ren TL, Tian H

Stress-engineered 0.34 nm graphene memristors for low-power probabilistic computing.

Medicine & Health Published 2026 Verification Pending

Overview & Synopsis

Open access biomedical research article published in Nat Commun.

Advertisement
SPONSOR CONTENT
Indexed from repository: PubMed Central (pmc.ncbi.nlm.nih.gov)
Loading document from verified source...
Keyboard Shortcuts: ← / → for pages • + / - for zoom • 0 to fit width Powered by Mozilla PDF.js v3.11

Document Information

Document Title Stress-engineered 0.34 nm graphene memristors for low-power probabilistic computing.
Author / Organization Liu Y, Li J, Pan Z, Ding H, Hong Y, Wu F, Zhang P, Guo Y, Liu Z, Ren TL, Tian H
Subject & Discipline Nat Commun
Categories Medicine & Health
Publication Year 2026
License / Rights Open Access / Creative Commons
Resource Verification Listed PDF (Verification Pending)
Original Host Website PubMed Central (pmc.ncbi.nlm.nih.gov)
File Format application/pdf (Portable Document Format)
Language EN
Catalog ID DOC-36466
Original Source Link Visit Source Page on pmc.ncbi.nlm.nih.gov »