Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
Indexed from repository: NASA Technical Reports Server
(
ntrs.nasa.gov)
Document Information
| Document Title | Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment |
|---|---|
| Author / Organization | Chen Yang, Houqiang Fu, Po-Yi Su, Hanxiao Liu, Kai Fu, Xuanqi Huang, Tsung-Han Yang, Hong Chen, Jingan Zhou, Xuguang Deng, Jossue Montes, Xin Qi, Fernando A. Ponce, Yuji Zhao |
| Subject & Discipline | ACCEPTED_MANUSCRIPT |
| Categories | Aerospace & Aviation |
| Publication Year | 2026 |
| License / Rights | Public Domain / NASA STI Open Access |
| Resource Verification | Listed PDF (Verification Pending) |
| Original Host Website |
NASA Technical Reports Server
(ntrs.nasa.gov)
|
| File Format | application/pdf (Portable Document Format) |
| Language | EN |
| Catalog ID | DOC-12892 |
| Original Source Link | Visit Source Page on ntrs.nasa.gov » |