Hybrid simulation method of quantum characteristics for advanced Si MOSFETs under extreme conditions by incorporating simplified master equation with TCAD
Xiaohui Zhu, Huaxiang Yin • Results in Physics
(2024)
Silicon (Si)-based quantum-dot (QD) device by advanced CMOS process is one of important technologies for quantum computing application and currently, it needs a fast and accurate quantum characteristics simulation for designing and optimizi...
DOAJ
Open Access (DOAJ)
DOI:
10.1016/j.rinp.2024.107856